| PART |
Description |
Maker |
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| M27W064-110N1T M27W064 M27W064-100M1T M27W064-100N |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM™ MEMORY
64 MBIT (4MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory
64 Mbit 4Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| GS74117A |
4Mb Async SRAMs
|
GSI Technology
|
| AM27C4096-15JC |
IC-SM-4MB CMOS PROM 集成电路MB的的CMOS胎膜早破
|
Rochester Electronics, LLC
|
| ACE25C400 |
4MB Serial Flash Memory
|
ACE Technology Co., LTD...
|
| M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽，引导块V电源快闪记忆
|
STMicroelectronics N.V.
ST Microelectronics
|
